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 MS7204-A2
PRESSURE SENSOR DIE (0-4 BAR) FOR HARSH ENVIRONMENT
* * * * * * 0 to 400 kPa range (4 bar or 58 PSI) Uncompensated absolute pressure sensor die Piezoresistive silicon micromachined sensor Hermetic sensor, temperature up to 150 C Pads on one side RoHS-compatible & Pb-free1
DESCRIPTION
The MS7204-A2 is an absolute silicon micro-machined pressure sensor for harsh environment, with the pads on one side. A vacuum reference cavity is sealed on top of the sensitive silicon membrane by the anodic bonding of a glass cap. The pressure, applied on the backside, is converted in electrical signal by piezo-resistors implanted in the silicon membrane. To improve the sensor stability, a drilled glass is bonded on the backside. As the pressure port consists of glass and silicon, both stable in most of the chemicals, the MS7204-A2 is suitable for media-resistive applications.
FEATURES
* * * Media resistive pressure sensor die Typical output Span 150mV @ 5 V Temperature range -40 ...+150 C * * * Linearity 0.15% (typical) Die size 1.35 x 1.79 mm2 Low cost, high reliability & stability
APPLICATION
* * Harsh environments Absolute pressure sensor systems
ELECTRICAL CONNECTIONS
Pin 1 2 3 4 5 Symbol EPI / I diode (-) Vs+ / I diode (+) Out+ GND OutDescription Epi contact / Cathode of diode (n) Supply voltage / Anode of diode (p) Positive output* Ground Negative output*
*Positive output for pressure applied backside
1
The European RoHS directive 2002/95/EC (Restriction of the use of certain Hazardous Substances in electrical and electronic equipment) bans the use of lead, mercury, cadmium, hexavalent chromium and polybrominated biphenyls (PBB) or polybrominated diphenyl ethers (PBDE).
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BOND PAD CONFIGURATION
Important remarks: The epitaxial layer is not connected to the Vs+ pin on the die, this is to allow temperature measurement with the diode. The epi contact and the cathode of the diode have the same electrical potential. To avoid bias effects, diode and bridge cannot be used simultaneously. As the sensing elements are diffused resistances, the voltage applied on the ground pads (GND) and on the supply voltage (Vs+) have to be lower or equal than the voltage applied on the epi contact (EPI). For better stability it is good to define the potential of the EPI. Gold ball bonding or aluminum wedge bonding can be used to wire-bond the sensor. The quality of the wire-bonding is equipment and process dependant. For this reason, it is strongly recommended that a thorough wire-bonding qualification is made by the end user if the sensor is going to be operated over an extended temperature range.
LAYOUT
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FULL SCALE PRESSURE
kPa 400 bar 4 mbar 4000 PSI 58 atm 3.948 mm Hg 3000.24 m H2O 40 Inches H2O 1607
ABSOLUTE MAXIMUM RATINGS
Parameter Supply voltage, bridge Supply current diode Storage temperature Pressure overload Symbol Vs+ I diode (+) TS Ta = 25 C -40
o
Conditions
Min
Max 12 100 +150 5
Unit V A o C Bar
ELECTRICAL CHARACTERISTICS
(Reference conditions: Supply Voltage VS+ = 5 Vdc; Ambient Temperature Ta = 25 ) C
Parameter Operating Pressure Range Operating Temperature Range Bridge Resistance Full-scale span (FS) Zero Pressure Offset Linearity Diode forward voltage (VF) Temperature Coefficient of Resistance Span Offset Diode Pressure Hysteresis Repeatability Temperature Hysteresis
Min 0 -40 3.0 120 -40
Typ
Max 4 150
Unit Bar C k mV mV % FS V 1 2 3 2 4 5 6
Notes
3.4 150 0 0.15 0.550
3.8 180 40 0.3
+ 2700 - 1700 - 80 -0.2 -0.2 -0.15
+ 3100 - 2100 -2.2
+ 3400 - 2400 + 80 0.2 0.2 0.15
ppm/ C ppm/ C V/ C mV/ C % FS % FS % FS
NOTES 1) Deviation at one half full-scale pressure from the least squares best line fit over pressure range (0 to 4bar). 2) The forward voltage of the diode is measured when driving it with a typical value of 40 A. 3) Slope of the endpoint straight line from 25 to 60 C C. 4) Output deviation at any pressure within the specified range, when this pressure is cycled to and from the minimum or maximum rated pressure, at 25 C. 5) Same as 4) after 10 pressure cycles. 6) Maximum difference in offset after one thermal cycle from -40 to +150 C C.
TEMPERATURE COMPENSATION
The diode between the piezo diffusion and the epi contact can be used for temperature measurement. The forward voltage of the diode is measured on I diode (-) when a typical current of 40 A fed in I diode (+). Temperature measurement cannot be done at the same time as pressure sensing due to bias effects. DA7204-A2_000.doc
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PICKING TOOLS
The MS7204 sensors have a topside glass cap (1.11 x 1.35 mm ) and a backside glass (1.79 x 1.35 mm ). The pick and place tool has to be of a soft material such as rubber (Hardness 78-97 Shore A). Its external size must fit the glass cap. Successful tests were done with some tools of SPT (see SPT drawing and references below). SPT references External dimension Internal dimensions RTR-A2-045x045 TL & TW: 0.045 inch /1.14 mm H: 0.025 inch / 0.63 mm
2 2
WIRE BONDING
The bondable area is 100 x 100 m for the EPI pad and 100 x 285 m for the other pads. The location of the bonding pads is close to the top Pyrex glass edge reducing the possible size and angle of the bonding capillary. Refer to the detail view D on the layout for more precision.
2 2
ORDERING INFORMATION
Product Code MS7204-A2 type Absolute Product 4 bar pressure sensor die for harsh environment sawn on b/f Art.-Nr. 720425021
The MS7204-A2 dice are supplied sawn on blue foil, mounted on plastic rings
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FACTORY CONTACTS
Factory and European Sales office Intersema Sensoric SA Ch. Chapons-des-Pres 11 CH-2022 Bevaix Switzerland Phone: +41 32 847 9550 Fax: +41 32 847 9569 e-mail: Website: www.intersema.ch
USA Measurement Specialties Inc. 1000 Lucas Way Hampton, VA 23666 USA Phone: Fax: e-mail: Website: +1 800 555 1551 +1 757 766 4297 sales@meas-spec.com www.meas-spec.com
ASIA Measurement Specialties (China), Ltd. F1.6-4D, Tian An Development Compound Shenzhen, China 518048 Phone: Fax: e-mail: Website: +86 755 8330 1004 +86 755 8330 6797 pfc.cs.asia@meas-spec.com www.meas-spec.com
NOTICE Intersema reserves the right to make changes to the products contained in this data sheet in order to improve the design or performance and to supply the best possible products. Intersema assumes no responsibility for the use of any circuits shown in this data sheet, conveys no license under any patent or other rights unless otherwise specified in this data sheet, and makes no claim that the circuits are free from patent infringement. Applications for any devices shown in this data sheet are for illustration only and Intersema makes no claim or warranty that such applications will be suitable for the use specified without further testing or modification.
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